Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.
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IRF630 MOSFET. Datasheet pdf. Equivalent
N-channel V – 0. This datasheet is subject to change without notice. Single Pulse Avalanche Energy b. Pulsed Diode Forward Current a.
IRF Datasheet(PDF) – International Rectifier
Copy your embed code and put on your site: Body Diode Reverse Recovery Charge. Continuous Source-Drain Datazheet Current. L S die contact. Operating Junction and Storage Temperature Range. Drain-Source Body Diode Characteristics.
V DS Temperature Coefficient. Case-to-Sink, Flat, Greased Surface. IRF datasheet and specification datasheet. Repetitive rating; pulse width limited by maximum junction temperature see fig. View PDF for Mobile. Safe operating area for TO Figure 3. Elcodis is a trademark of Elcodis Company Ltd. Switching times test circuit for resistive load Figure These packages have a Lead-free second level interconnect.
Gate charge vs gate-source voltage Figure Static drain-source on resistance Figure The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Repetitive Avalanche Energy a.
PDF IRF630 Datasheet ( Hoja de datos )
Body Diode Reverse Recovery Time. Electrical characteristics Figure Thermal impedance for TO Figure 4. The maximum ratings related to soldering conditions are also marked on the inner box label.
I SM p – n junction diode. Gate charge test datasheer Figure Pulsed Drain Current a. Contents Contents 1 Electrical ratings. Unclamped Inductive load test circuit Figure Test circuit for inductive load switching and diode recovery times Figure All other trademarks are the property of their respective owners. Soldering Recommendations Peak Temperature. Repetitive Avalanche Current a.
The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. IRF datasheet and specification datasheet Download datasheet. Prev Next General features. Download datasheet Kb Share this page.
Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Zero Gate Voltage Drain Current.
IRF Hoja de datos ( Datasheet PDF ) – N-Channel Power MOSFETs
The TOAB package is universally preferred for all. Pulse width limited by safe operating area 2.
The low thermal resistance. Vishay Intertechnology Electronic Components Datasheet. Unclamped inductive waveform Figure Capacitance variations Figure