Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. Fourth Generation IGBT.
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The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low—saturation-voltage capability of bipolar gt60n321 by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. Interest gt60n321 be charged to your account from the purchase date if the gt60n321 is not paid in full within 6 months. Expedited Shipping from outside US.
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1PCS IGBT Transistor TOHSIBA GT60N TO-3PL | eBay
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